technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 2400 a dc-collector current t c = 25 c i c 3800 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 4800 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 19,2 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 2400 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 4800 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 1500 ka 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 4 k v charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 2400a, v ge = 15v, t vj = 25 c v ce sat 2,6 3,1 v collector-emitter saturation voltage i c = 2400a, v ge = 15v, t vj = 125 c 3,1 3,6 v gate-schwellenspannung gate threshold voltage i c = 190ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v ... +15v q g 29 c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies 160 nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res 8 n f kollektor-emitter reststrom v ce = 1700v, v ge = 0v, t vj = 25 c i ces 0,06 4,5 ma collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 125 c 30 240 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25 c i ges 400 na prepared by: alfons wiesenthal date of publication: 10 . 11.2000 approved by: christoph lbke; 10.11.2000 revision: serie 1 ( 8 ) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 2400, v ce = 900v turn on delay time (inductive load) v ge = 15v , r g = 0, 6 w , t vj = 25c t d,on 0,3 s v ge = 15v , r g = 0,6 w , t vj = 125c 0,3 s anstiegszeit (induktive last) i c = 2400, v ce = 900v rise time (inductive load) v ge = 15v , r g = 0, 6 w , t vj = 25c t r 0,23 s v ge = 15v , r g = 0,6 w , t vj = 125c 0,23 s abschaltverz?gerungszeit (ind. last) i c = 2400, v ce = 900v turn off delay time (inductive load) v ge = 15v , r g = 0, 6 w , t vj = 25c t d,off 1,5 s v ge = 15v , r g = 0,6 w , t vj = 125c 1,5 s fallzeit (induktive last) i c = 2400, v ce = 900v fall time (inductive load) v ge = 15v , r g = 0, 6 w , t vj = 25c t f 0,18 s v ge = 15v , r g = 0,6 w , t vj = 125c 0,19 s einschaltverlustenergie pro puls i c = 2400a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 0, 6 w , t vj = 125c, l s = 50nh e on 750 mws abschaltverlustenergie pro puls i c = 2400a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 0, 6 w , t vj = 125c, l s = 50nh e off 1060 mws kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =1000 v , v cemax =v ces -l sce di/dt i sc 9600 a modulinduktivit?t stray inductance module l sce 10 nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip pro zweig / per arm r cc+ee 0,06 m w charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 2400a, v ge = 0v, t vj = 25c v f 2,1 2,5 v forward voltage i f = 2400a, v ge = 0v, t vj = 125c 2,1 2,5 v rckstromspitze i f = 2400a , - di f /dt = 11000a/sec peak reverse recovery current v r = 900v, vge = -10v, t vj = 25c i rm 1750 a v r = 900v, vge = -10v, t vj = 125c 2200 a sperrverz?gerungsladung i f = 2400a , - di f /dt = 11000a/sec recovered charge v r = 900v, vge = -10v, t vj = 25c q r 530 as v r = 900v, vge = -10v, t vj = 125c 960 as abschaltenergie pro puls i f = 2400a , - di f /dt =11000a/sec reverse recovery energy v r = 900v, vge = -10v, t vj = 25c e rec 320 mws v r = 900v, vge = -10v, t vj = 125c 600 mws fz2400r17kf6c b2 2 (8) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc 0,007 k/w thermal resistance, junction to case diode/diode, dc 0,012 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module l paste = 1 w/m*k / l grease = 1 w/m*k r thck 0,006 k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t v j 150 c betriebstemperatur operation temperature t op -40 125 c lagertemperatur storage temperature t stg -40 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation aln kriechstrecke creepage distance 32 mm luftstrecke clearance 20 mm cti comperative tracking index min. >400 anzugsdrehmoment f. mech. befestigung m1 5 n m mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 2 n m terminal connection torque terminals m8 8 - 10 nm gewicht weight g 1500 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3 (8) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 i c [a] v ce [v] i c [a] v ce [v] 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tj = 25c tj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical ) v ge = 15v 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical ) t vj = 125c 4 (8) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 i c [a] v ge [v] i f [a] v f [v] 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 567 8 9 1 0 1 1 1 2 1 3 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical ) v ce = 20v 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tj = 25c tj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 ( 8 ) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 e [ m j ] i c [a] e [ m j ] r g [ w ] 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical ) r gon = r goff =0,6 w , v ce = 900v, t j = 125c, vge = 15v 0 500 1000 1500 2000 2500 3000 3500 4000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 2400a , v ce = 900v , t j = 125c, v ge = 15v 6 ( 8 ) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 z thj c [ k / w ] t [sec] i 1234 r i [k/kw] : igbt 0,658 3,3 0,997 2,04 t i [sec] : igbt 0,027 0,052 0,09 0,838 r i [k/kw] : diode 5,54 2,48 0,79 3,19 t i [sec] : diode 0,0287 0,0705 0,153 0,988 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa ) r g = 0,6 ohm, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 1000 2000 3000 4000 5000 0 200 400 600 800 1000 1200 1400 1600 1800 ic,modul ic,chip 0,0001 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 7 (8) fz2400r17kf6c b2
technische information / technical information igbt-module igbt-modules fz2400r17kf6c b2 ?u?ere abmessungen / external dimensions 8 ( 8 ) fz2400r17kf6c b2
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